Single-layer InAs/InP (100) quantum-dots on well laser and mid-infrared emission
نویسندگان
چکیده
We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long-wavelength emission centered at 2.46 μm at 6 K is also observed from such QDs on QW structure. KeywordsIII-V semiconductors; semiconductor quantum dots; semiconductor lasers; mid-infrared emission
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